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NTE64 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE64 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE64 Silicon NPN Transistor UHF High Speed Switch Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA D Low Noise Figure: NF = 2dB Typ @ f = 1GHz D High Power Gain: Gpe = 10dB Min @ f = 1GHz D Third Order Intercept: +23dBm Typ Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage, VCBO 25V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Collector Current, IC 30mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Dissipation (TC = +25°C), PD 0.375W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 3.3mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Ambient, RthJA 300 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 25 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 2 – – V Collector Cutoff Current ICBO VCB = 15V, IE = 0 – – 50 nA |
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