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SUB65P06-20 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUB65P06-20
Description  P-Channel 60-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUB65P06-20 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUP/SUB65P06-20
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = –250 mA
–60
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–2.0
–3.0
–4.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = –60 V, VGS = 0 V
–1
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V, TJ = 125_C
–50
mA
DSS
VDS = –60 V, VGS = 0 V, TJ = 175_C
–150
m
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –10 V
–120
A
VGS = –10 V, ID = –30 A
0.017
0.020
Drain-Source On-State Resistancea
rDS(on)
VGS = –10 V, ID = –30 A, TJ = 125_C
0.033
W
DS(on)
VGS = –10 V, ID = –30 A, TJ = 175_C
0.042
Forward Transconductancea
gfs
VDS = –15 V, ID = –30 A
25
S
Dynamicb
Input Capacitance
Ciss
4500
Output Capacitance
Coss
VGS = 0 V, VDS = –25 V, f = 1 MHz
870
pF
Reversen Transfer Capacitance
Crss
350
Total Gate Chargec
Qg
85
120
Gate-Source Chargec
Qgs
VDS = –30 V, VGS = –10 V, ID = –65 A
24
nC
Gate-Drain Chargec
Qgd
DS
GS
D
22
Turn-On Delay Timec
td(on)
15
40
Rise Timec
tr
VDD = –30 V, RL = 0.47 W
40
80
Turn-Off Delay Timec
td(off)
VDD = –30 V, RL = 0.47 W
ID ] –65 A, VGEN = –10 V, RG = 2.5 W
65
120
ns
Fall Timec
tf
D
GEN
G
30
60
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Is
–65
Pulsed Current
ISM
–200
A
Forward Voltagea
VSD
IF = –65 A, VGS = 0 V
–1.1
–1.4
V
Reverse Recovery Time
trr
70
120
ns
Peak Reverse Recovery Current
IRM(REC)
IF = –65 A, di/dt = 100 A/ms
7
9
A
Reverse Recovery Charge
Qrr
F
m
0.245
0.54
mC
Notes:
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing
d.
Independent of operating temperature.


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