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SDB55N02 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp. |
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SDB55N02 Datasheet(HTML) 3 Page - SamHop Microelectronics Corp. |
3 / 6 page Parameter S ymbol Condition Min Typ Max Unit E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS Diode Forward Voltage VSD VGS = 0V, Is =26A 0.9 1.3 V a F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation Temperature F igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V GS , G ate-to-S ource Voltage (V ) V DS , Drain-to-S ource Voltage (V ) Notes b.Guaranteed by design, not subject to production testing. a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. C iss C oss C rss 3000 2500 2000 1500 1000 500 0 0 10 5 15 20 25 30 80 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 V GS =10,9,8,7,6,5,4V 60 45 30 15 0 0 1 2 3 4 5 75 4 3 S DP /B 55N02 T J=125 C 6 V GS =3V -55 C 25 C -50 -25 0 25 50 75 100 125 150 1.60 1.40 1.20 1.00 0.80 0.60 0.40 ID=26A V GS =10V with T j, J unction T emperature ( C ) |
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