SDB55N02 datasheet(1/6 Pages) SAMHOP

Part #	SDB55N02

Description	N-Channel E nhancement Mode Field E ffect Transistor

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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N-Channel E nhancement Mode Field E ffect Transistor

ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Case

Thermal R esistance, Junction-to-Ambient

R JC

R JA

2

62.5

/W

C

/W

C

20

Parameter

S ymbol

Limit

Unit

Drain-S ource Voltage

VDS

V

Gate-S ource Voltage

VGS

V

-Pulsed

ID

23

A

IDM

57

A

Drain-S ource Diode Forward Current

IS

55

A

Maximum Power Dissipation

PD

W

Operating and S torage Temperature R ange

TJ, TS TG

-65 to 175

C

@ Tc=25 C

75

Drain Current-Continuous

@ TJ=125 C

a

S

G

D

S DB S E R IE S

TO-263(DD-PAK)

G

S

D

S DP S E R IE S

TO-220

S

D

G

4

1

P R ODUC T S UMMAR Y

V DS S

ID

R DS (on) ( m W ) Max

20V

32A

19 @ V GS = 4.5V

S DP /B 55N02

F E AT UR E S

S uper high dense cell design for extremely low R DS (ON).

High power and current handling capability.

TO-220 & TO-263 package.

S amHop Microelectronics C orp.

May,2004 ver1.1

12

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