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FDC6324L Datasheet(PDF) 6 Page - ON Semiconductor

Part No. FDC6324L
Description  Integrated Load Switch
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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FDC6324L Datasheet(HTML) 6 Page - ON Semiconductor

   
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FDC6324L Load Switch Application
General Description
This device is particularly suited for
computer
peripheral switching applications where 20V
input and 1A output current capability
are
needed.
This load switch integrates a small
N-Channel Power MOSFET (Q1) which drives a
large P-Channel Power MOSFET (Q2) in one tiny
SuperSOT
TM-6 package.
A load switch is usually configured for high side
switching so that the load can be isolated from
the active power source. A P-Channel Power
MOSFET, because it does not require its drive
voltage above the input voltage, is usually more
cost effective than using an N-Channel device in
this particular application. A large
P-Channel
Power MOSFET minimizes voltage drop. By
using a small N-Channel device the driving
stage is simplified.
Component Values
R1
Typical 10k - 1M
R2
Typical 0 - 10k
(optional)
C1
Typical 1000pF
(optional)
Design Notes
R1 is needed to turn off Q2.
R2 can be used to soft start the switch in the case the output capacitance Co is small.
R2
should be at least 10 times smaller than R1 to guarantee Q1 turns on.
By using R1 and R2 a certain amount of current is lost from the input. This bias current loss is given by
the equation
when the switch is ON. I
BIAS_LOSS can be minimized by large R1.
IBIAS _LOSS
= Vin
R 1
+R2
R2 and C
RSS of Q2 make ramp for slow turn on. If excessive overshoot current occurs due to fast turn on,
additional capacitance C1 can be added externally to slow down the turn on.
APPLICATION CIRCUIT
IN
OUT
ON/OFF
R1
R2
C1
LOAD
Co
Q2
Q1
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