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FDC6324L Datasheet(PDF) 6 Page - ON Semiconductor |
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FDC6324L Datasheet(HTML) 6 Page - ON Semiconductor |
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FDC6324L Load Switch Application General Description This device is particularly suited for computer peripheral switching applications where 20V input and 1A output current capability are needed. This load switch integrates a small N-Channel Power MOSFET (Q1) which drives a large P-Channel Power MOSFET (Q2) in one tiny SuperSOT TM-6 package. A load switch is usually configured for high side switching so that the load can be isolated from the active power source. A P-Channel Power MOSFET, because it does not require its drive voltage above the input voltage, is usually more cost effective than using an N-Channel device in this particular application. A large P-Channel Power MOSFET minimizes voltage drop. By using a small N-Channel device the driving stage is simplified. Component Values R1 Typical 10k - 1M Ω R2 Typical 0 - 10k Ω (optional) C1 Typical 1000pF (optional) Design Notes R1 is needed to turn off Q2. R2 can be used to soft start the switch in the case the output capacitance Co is small. R2 ≤ should be at least 10 times smaller than R1 to guarantee Q1 turns on. By using R1 and R2 a certain amount of current is lost from the input. This bias current loss is given by the equation when the switch is ON. I BIAS_LOSS can be minimized by large R1. IBIAS _LOSS = Vin R 1 +R2 R2 and C RSS of Q2 make ramp for slow turn on. If excessive overshoot current occurs due to fast turn on, additional capacitance C1 can be added externally to slow down the turn on. APPLICATION CIRCUIT IN OUT ON/OFF R1 R2 C1 LOAD Co Q2 Q1 www.onsemi.com 6 |
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