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RA07H0608M Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RA07H0608M Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 9 page  MITSUBISHI RF MOSFET MODULE RA07H0608M 68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/MOBILE RADIO RA07H0608M MITSUBISHI ELECTRIC 25 April 2003 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD ≅0 @ V DD=12.5V, VGG=0V) • Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW • η T>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW • Broadband Frequency Range: 68-88MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA07H0608M-E01 RA07H0608M-01 (Japan - packed without desiccator) Antistatic tray, 25 modules/tray BLOCK DIAGRAM 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) 3 2 4 1 5 PACKAGE CODE: H46S |
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