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OPE5294 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # OPE5294
Description  GaAs Infrared Emitter
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OPE5294 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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25
GaAs Infrared Emitter
CCCC
OPE5294
C
The OPE5294 is GaAs infrared emitting diode
DIMENSIONS (Unit : mm)
that is designed for low forward voltage and
high reliability. This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has wide beam angle with lensed package
and cup frame.
FEATURES
C
• High-output powerC
• Wide beam angle
• High reliability
• Available for pulse operating
• Low cost
C
APPLICATIONS
C
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
C C
C
CCCCCCCCCCCCCCCCC(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
PDC
150
C
Forward current
IFC
100
EC
Pulse forward current
CCC 1C
IFPC
1.0
A
C
Reverse voltage
VRC
5.0
C
Operating temp.
Topr.
-25~ +85
°CC
Soldering temp. CCCCCCCCCCCCCC 2
Tsol.
260.
°CC
1.Duty ratio = 1/100, pulse width=0.1ms.
2.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
(Ta=25
°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF =100mA
1.4
1.7
V
Reverse current
IR
VR= 5V
10
µA
Capacitance
Ct
f = 1MHz
20
pF
Radiant intensity
Ie
IF=100mA
30
mW/
Peak emission wavelength
p
IF= 50mA
940
nm
Spectral bandwidth 50%
IF= 50mA
45
nm
Half angle

IF=100mA
±22
deg.
CC
2- 0.5
2.5
Anode
Cathode
Tolerance :
±0.2mm


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