K6R4008V1B-C/B-L, K6R4008V1B-I/B-P

CMOS SRAM

PRELIMINARY

Rev 2.2

- 4 -

May 1999

°C, Vcc=3.3±0.3V, unless otherwise specified)

* The above parameters are also guaranteed at industrial temperature range.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

-2

2

µA

Output Leakage Current

-2

2

µA

Operating Current

Min. Cycle, 100% Duty

10ns

-

205

mA

12ns

-

200

15ns

-

195

Standby Current

-

50

mA

f=0MHz, CS

Normal

-

10

mA

L-Ver.

-

1.2

Output Low Voltage Level

-

0.4

V

Output High Voltage Level

2.4

-

V

°C, f=1.0MHz)

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

MIN

Max

Unit

Input/Output Capacitance

-

8

pF

Input Capacitance

-

7

pF

°C)

*

The above parameters are also guaranteed at industrial temperature range.

≤ 8ns) for I ≤ 20mA.

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

3.0

3.3

3.6

V

Ground

0

0

0

V

Input High Voltage

2.0

-

V

Input Low Voltage

-0.3**

-

0.8

V