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IXFN44N50 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. IXFN44N50
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN44N50 Datasheet(HTML) 2 Page - IXYS Corporation

  IXFN44N50 Datasheet HTML 1Page - IXYS Corporation IXFN44N50 Datasheet HTML 2Page - IXYS Corporation IXFN44N50 Datasheet HTML 3Page - IXYS Corporation IXFN44N50 Datasheet HTML 4Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D = 0.5 • ID25, pulse test
22
42
S
C
iss
8400
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
900
pF
C
rss
280
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
60
ns
t
d(off)
R
G = 1 Ω (External),
100
ns
t
f
30
ns
Q
g(on)
270
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
60
nC
Q
gd
135
nC
R
thJC
TO-264 AA
0.25
K/W
R
thCK
TO-264 AA
0.15
K/W
R
thJC
miniBLOC, SOT-227 B
0.24
K/W
R
thCK
miniBLOC, SOT-227 B
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS = 0 V
48
A
I
SM
Repetitive; pulse width limited by T
JM
192
A
V
SD
I
F = 100 A, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
250
ns
Q
RM
I
F = IS, -di/dt = 100 A/µs, VR = 100 V
TBD
µC
I
RM
20
A
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
miniBLOC, SOT-227 B
IXFN / IXFK 44N50
IXFN / IXFK 48N50
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025


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