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IXFH48N50 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFH48N50
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH48N50 Datasheet(HTML) 1 Page - IXYS Corporation

  IXFH48N50 Datasheet HTML 1Page - IXYS Corporation IXFH48N50 Datasheet HTML 2Page - IXYS Corporation IXFH48N50 Datasheet HTML 3Page - IXYS Corporation IXFH48N50 Datasheet HTML 4Page - IXYS Corporation  
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C1 - 184
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
T
J
= 25
°C to 150°C
500
500
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
500
500
V
V
GS
Continuous
±20
±20
V
V
GSM
Transient
±30
±30
V
I
D25
T
C
= 25
°C
44N50
44
44
A
48N50
48
48
A
I
DM
T
C
= 25
°C,
44N50
176
176
A
pulse width limited by T
JM
48N50
192
192
A
I
AR
T
C
= 25
°C24
24
A
E
AR
T
C
= 25
°C30
30
mJ
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
5
5
V/ns
T
J ≤ 150°C, RG = 2 Ω
P
D
T
C
= 25
°C
500
520
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in) from case for 10 s
300
-
°C
V
ISOL
50/60 Hz, RMS
t = 1 min
-
2500
V~
I
ISOL ≤ 1 mA
t = 1 s
-
3000
V~
M
d
Mounting torque
0.9/6
1.5/13 Nm/lb.in.
Terminal connection torque
-
1.5/13 Nm/lb.in.
Weight
10
30
g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
l
International standard packages
l
Molding epoxies meet UL 94 V-0
flammability classification
l
SOT-227B miniBLOC with aluminium
nitride isolation
l
Low R
DS (on) HDMOS
TM process
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Synchronous rectification
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
Temperature and lighting controls
Advantages
l
Easy to mount
l
Space savings
l
High power density
V
DSS
I
D25
R
DS(on)
IXFK / IXFN 44 N50
500 V
44 A 0.12
IXFK / IXFN 48 N50
500 V
48 A 0.10
t
rr
≤≤≤≤ 250 ns
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 1 mA
500
V
V
GS(th)
V
DS
= V
GS, ID = 8 mA
2
4
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±200 nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J = 25°C
400
µA
V
GS = 0 V
T
J = 125°C2
mA
R
DS(on)
V
GS = 10 V, ID = 0.5 • ID25
44N50
0.12
48N50
0.10
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
93001I (07/00)
D
S
G
S
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
S
G
D
TO-264 AA
(IXFK)
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.


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