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HLB121I Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics

Part No. HLB121I
Description  NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
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Maker  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
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HLB121I Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics

   
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9027
Issued Date : 1996.11.06
Revised Date : 2004.09.24
Page No. : 1/4
HLB121I
HSMC Product Specification
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121I is a medium power transistor designed for use in switching
applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
Absolute Maximum Ratings (T
A=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
• Maximum Power Dissipation
Total Power Dissipation (T
C=25°C) .................................................................................................................... 10 W
• Maximum Voltages and Currents
BV
CBO Collector to Base Voltage ....................................................................................................................... 600 V
BV
CEO Collector to Emitter Voltage.................................................................................................................... 400 V
BV
EBO Emitter to Base Voltage .............................................................................................................................. 6 V
I
C Collector Current (DC) ............................................................................................................................... 300 mA
I
C Collector Current (Pulse)............................................................................................................................ 600 mA
I
B Base Current (DC)........................................................................................................................................ 40 mA
I
B Base Current (Pulse) .................................................................................................................................. 100 mA
Electrical Characteristics (T
A=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
600
-
-
V
I
C=100uA
BV
CEO
400
-
-
V
I
C=10mA
BV
EBO
6-
-
V
I
E=10uA
I
CBO
-
-
10
uA
V
CB=550V
I
CEO
-
-
10
uA
V
CB=400V
I
EBO
-
-
10
uA
V
EB=6V
*V
CE(sat)1
-
-
400
mV
I
C=50mA, IB=10mA
*V
CE(sat)2
-
-
750
mV
I
C=100mA, IB=20mA
*V
BE(sat)
--
1
V
I
C=50mA, IB=10mA
*h
FE1
8-
-
V
CE=10V, IC=10mA
*h
FE2
10
-
36
V
CE=10V, IC=50mA
*Pulse Test: Pulse Width
≤380us, Duty Cycle≤2%
TO-251


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