128K x 8 Static RAM
CY7C1018V33
CY7C1019V33
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
October 18, 1999
3
Features
• High speed
—tAA = 10 ns
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
Functional Description
The CY7C1018V33/CY7C1019V33 is a high-performance
CMOS static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE), an active LOW Output Enable (OE), and three-state driv-
ers. This device has an automatic power-down feature that
significantly reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location speci-
fied on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1018V33 is available in a standard 300-mil-wide
SOJ
and
CY7C1019V33
is
available
in
a
standard
400-mil-wide
package.
The
CY7C1018V33
and
CY7C1019V33 are functionally equivalent in all other re-
spects.
Logic Block Diagram
Pin Configurations
A1
A2
A3
A4
A5
A6
A7
A8
COLUMN
DECODER
INPUT BUFFER
POWER
DOWN
WE
OE
I/O0
I/O1
I/O2
I/O3
512 x 256 x 8
ARRAY
I/O7
I/O6
I/O5
I/O4
A0
CE
1
2
3
4
5
6
7
8
9
10
11
14
19
20
24
23
22
21
25
28
27
26
Top View
SOJ
12
13
29
32
31
30
16
15
17
18
A7
A1
A2
A3
CE
I/O0
I/O1
VCC
A13
A16
A15
OE
I/O7
I/O6
A12
A11
A10
A9
I/O2
A0
A4
A5
A6
I/O4
VCC
I/O5
A8
I/O3
WE
VSS
A14
1019V33–1
1019V33–2
V
SS
Selection Guide
7C1019V33-10
7C1018V33-12
7C1019V33-12
7C1018V33-15
7C1019V33-15
Maximum Access Time (ns)
10
12
15
Maximum Operating Current (mA)
175
160
145
Maximum Standby Current (mA)
5
5
5
L
−
0.5
0.5
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
