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CM800E2Z-66H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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CM800E2Z-66H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page Mar. 2003 MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE INSULATED TYPE q IC...................................................................800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. CM800E2Z-66H HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CIRCUIT DIAGRAM A K (E) (C) E E C C E G C LABEL C E G C E CM EE CC 13 61.5 61.5 79.4 20.25 57 ±0.25 171 190 5.2 40 15 41.25 57 ±0.25 57 ±0.25 3 - M4 NUTS 8 - φ7MOUNTING HOLES 6 - M8 NUTS |
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