CM800E2Z-66H datasheet(4/4 Pages) MITSUBISHI

Part #	CM800E2Z-66H

Description	HIGH POWER SWITCHING USE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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4 / 4 page

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM800E2Z-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

7

5

3

2

7102

100

7

23

5 7 103

23

5

3

2

101

5

7

5

3

2

7102

10–1

7

23

5 7 103

23

5

3

2

100

5

td(off)

VCC = 1650V, VGE =

±15V

RG = 2.5

Ω, Tj = 125°C

Inductive load

td(on)

tr

tf

VCC = 1650V, Tj = 125

°C

Inductive load

VGE =

±15V, RG = 2.5Ω

trr

Irr

7

5

3

2

102

7

5

3

2

103

10–2

10–3

10–2

10–1

100

7

5

3

2

10–1

7

5

3

2

100

101

7

5

3

2

23 5 7

Single Pulse

TC = 25

°C

Rth(j – c)Q = 0.012K/ W

Rth(j – c)R = 0.024K/ W

20

16

12

8

4

0

8000

10000

6000

0

2000

4000

VCC = 1650V

IC = 800A

HALF-BRIDGE

SWITCHING TIME CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

EMITTER CURRENT IE (A)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

TIME (s)

GATE CHARGE CHARACTERISTICS

(TYPICAL)

GATE CHARGE QG (nC)

0

0.5

1.0

1.5

2.0

2.5

3.0

0

400

800

1200

1600

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

(TYPICAL)

CURRENT (A)

Eon

Eoff

Erec

VCC = 1650V, VGE =

±15V,

RG = 2.5

Ω, Tj = 125°C,

Inductive load

10

8

6

4

2

0

010

20

30

GATE RESISTANCE (

Ω)

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

(TYPICAL)

VCC = 1650V, IC = 800A,

VGE =

±15V, Tj = 125°C,

Inductive load

Eon

Eoff

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CM800E2Z-66H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

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