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CEP06N5 Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEP06N5 Datasheet(HTML) 2 Page - Chino-Excel Technology |
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ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING a OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250 µA 500 V Zero Gate Voltage Drain Current IDSS VDS =500V, VGS =0V 25 µA Gate-Body Leakage IGSS VGS =30V, VDS =0V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS =VGS,ID = 250 µA 24 V Drain-Source On-State Resistance RDS(ON) VGS =10V, ID =4A 1.0 Ω On-State Drain Current ID(ON) VGS = 10V, VDS =10V 4 A S Forward Transconductance FS g VDS = 50V, ID =4A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =250V, ID =6A, VGS =10V RGEN=18 23 45 ns ns ns ns 35 70 162 240 44 90 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS =400V, ID = 6A, VGS =10V 54 65 nC nC nC Fall Time 4-18 Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD =50V, L=24mH A mJ Ω CEP06N5/CEB06N5 RG=25 Ω 6 500 27 0.85 6 9 4 4 |
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