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BSM10GP60 Datasheet(PDF) 3 Page - eupec GmbH |
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BSM10GP60 Datasheet(HTML) 3 Page - eupec GmbH |
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3 / 11 page  Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Modulinduktivität stray inductance module LσCE - - 100 nH Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip TC = 25°C RCC’+EE’ - 11 - m Ω Diode Wechselrichter/ Diode Inverter min. typ. max. Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 10 A VF - 1,25 1,7 V forward voltage VGE = 0V, Tvj = 125°C, IF = 10 A - 1,2 - V Rückstromspitze IF=INenn, - diF/dt = 400A/µs peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 300 V IRM -12 - A VGE = -10V, Tvj = 125°C, VR = 300 V - 15 - A Sperrverzögerungsladung IF=INenn, - diF/dt = 400A/µs recovered charge VGE = -10V, Tvj = 25°C, VR = 300 V Qr - 0,85 - µAs VGE = -10V, Tvj = 125°C, VR = 300 V - 1,35 - µAs Abschaltenergie pro Puls IF=INenn, - diF/dt = 400A/µs reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 300 V ERQ - 0,16 - mWs VGE = -10V, Tvj = 125°C, VR = 300 V - 0,26 - mWs Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max. Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 10,0 A VCE sat - 1,95 2,35 V collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 10,0 A - 2,2 - V Gate-Schwellenspannung gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,35mA VGE(TO) 4,5 5,5 6,5 V Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Cies - 0,6 - nF Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 600 V ICES - 0,5 500 µA collector-emitter cut-off current VGE = 0V, Tvj = 125°C, VCE = 600 V - 0,8 - mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 300 nA Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max. Durchlaßspannung Tvj = 25°C, I F = 10,0 A VF - 1,25 1,7 V forward voltage Tvj = 125°C, I F = 10,0 A - 1,2 - V NTC-Widerstand/ NTC-Thermistor min. typ. max. Nennwiderstand rated resistance TC = 25°C R25 -5 - k Ω Abweichung von R100 deviation of R100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 % Verlustleistung power dissipation TC = 25°C P25 20 mW B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K 3(11) DB-PIM-9.xls |
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Similar Description - BSM10GP60 |
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