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FP25R12KT3 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. FP25R12KT3
Description  IGBT-Module
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FP25R12KT3 Datasheet(HTML) 2 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
FP25R12KT3
IGBT-Module
IGBT-modules
preparedby:AS
approvedby:RS
dateofpublication:2013-10-03
revision:2.0
VorläufigeDaten
PreliminaryData
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM

1200
 V
Dauergleichstrom
ContinuousDCforwardcurrent

IF

25
 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
IFRM

50
 A
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
I²t

170
 A²s
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Durchlassspannung
Forwardvoltage
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
VF
1,65
1,65
2,15
V
V
Tvj = 25°C
Tvj = 125°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 25 A, - diF/dt = 700 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
IRM

26,0
24,0

A
A
Tvj = 25°C
Tvj = 125°C
Sperrverzögerungsladung
Recoveredcharge
IF = 25 A, - diF/dt = 700 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
Qr

2,80
5,00

µC
µC
Tvj = 25°C
Tvj = 125°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 25 A, - diF/dt = 700 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
Erec

0,90
1,80

mJ
mJ
Tvj = 25°C
Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
RthJC


1,35
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op
-40

125
°C
Diode,Gleichrichter/Diode,Rectifier
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM

1600
 V
DurchlassstromGrenzeffektivwertproChip
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM

50
 A
GleichrichterAusgangGrenzeffektivstrom
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM

60
 A
StoßstromGrenzwert
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM

315
260
 A
A
Grenzlastintegral
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t

495
340
 A²s
A²s
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Durchlassspannung
Forwardvoltage
Tvj = 150°C, IF = 25 A
VF

1,05

V
Sperrstrom
Reversecurrent
Tvj = 150°C, VR = 1600 V
IR

2,00

mA
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
RthJC


1,00
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op



°C


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