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FP25R12KT3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. FP25R12KT3
Description  IGBT-Module
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FP25R12KT3 Datasheet(HTML) 1 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
FP25R12KT3
IGBT-Module
IGBT-modules
preparedby:AS
approvedby:RS
dateofpublication:2013-10-03
revision:2.0
VorläufigeDaten
PreliminaryData
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
VCES

1200
 V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC

25
40
 A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM

50
 A
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Ptot

155
 W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VGES

+/-20
 V
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
VCE sat
1,70
1,90
2,15
V
V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 1,00 mA, VCE = VGE, Tvj = 25°C
VGEth
5,0
5,8
6,5
V
Gateladung
Gatecharge
VGE = -15 V ... +15 V
QG

0,24

µC
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
RGint

8,0

Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies

1,80

nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres

0,064

nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES


5,0
mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES


400
nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 36
td on

0,09
0,09

µs
µs
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 36
tr

0,03
0,05

µs
µs
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 36
td off

0,42
0,52

µs
µs
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 36
tf

0,07
0,09

µs
µs
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 25 A, VCE = 600 V, LS = 45 nH
VGE = ±15 V
RGon = 36
Eon

2,40
3,50

mJ
mJ
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 25 A, VCE = 600 V, LS = 45 nH
VGE = ±15 V
RGoff = 36
Eoff

1,80
2,10

mJ
mJ
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE
≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC

100

A
Tvj = 125°C
tP
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
RthJC


0,80
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op
-40

125
°C


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