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2N657 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. 2N657
Description  NPN SILICON PLANAR TRANSISTOR
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Maker  ETC [List of Unclassifed Manufacturers]
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2N657 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

   
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NPN SILICON PLANAR TRANSISTOR
2N657
TO-39
Metal Can Package
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
UNITS
Collector Emitter Voltage
VCEO
100
V
Collector Base Voltage
VCBO
100
V
Emitter Base Voltage
VEBO
8.0
V
Collector Current
IC
0.5
A
Power Dissipation @ Ta=25ºC
PD
1.0
W
Derate Above 25ºC
5.7
mW/ºC
Power Dissipation@ Tc=25ºC
PD
4.0
W
Derate Above 25ºC
22.8
mW/ºC
Operating And Storage Junction
Tj, Tstg
-65 to +200
ºC
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNITS
Collector Emitter Voltage
VCEO
IC=250µA,IB=0
100
V
Collector Base Voltage
VCBO
IC=100µA,IE=0
100
V
Emitter Base Voltage
VEBO
IC=250µA,Ic=0
8.0
V
Collector Cut off Current
ICBO
VCB=30V, IE=0
10
µA
DC Current Gain
hFE
IC=200mA,VCE=10V
30
90
Collector Emitter Saturation Voltage
*VCE(Sat)
IC=200mA,IB=40mA
4.0
V
SMALL SIGNAL CHARACTERISTICS
Input Impedance *
| hfe |IB=8mA, VCE=10V
0.5
K
*Pulse Test: Pulse Length= 300
µs, Duty Cycle <2%
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company


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