S29AL004D90BFI022 datasheet(5/55 Pages) SPANSION

Part #	S29AL004D90BFI022

Description	4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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Manufacturer	SPANSION [SPANSION]

Direct Link	http://www.spansion.com

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February 18, 2005 S29AL004D_00_A1

S29AL004D

3

Ad vance

Info rmat i o n

General Description

The S29AL004D is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288

bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and

48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the

byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0

volt VCC supply to perform read, program, and erase operations. A standard

EPROM programmer can also be used to program and erase the device.

This device is manufactured using Spansion’s 200nm process technology, and of-

fers all the features and benefits of the Am29LV400B and MBM29LV400T/BC,

which were manufactured using 320nm process technology.

The standard device offers access times of 70 and 90ns, allowing high speed mi-

croprocessors to operate without wait states. To eliminate bus contention the

device has separate chip enable (CE#), write enable (WE#) and output enable

(OE#) controls.

The device requires only a single 3.0 volt power supply for both read and write

functions. Internally generated and regulated voltages are provided for the pro-

gram and erase operations.

The device is entirely command set compatible with the JEDEC single-power-

supply Flash standard. Commands are written to the command register using

standard microprocessor write timings. Register contents serve as input to an in-

ternal state-machine that controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed for the programming and

erase operations. Reading data out of the device is similar to reading from other

Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This

initiates the Embedded Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies proper cell margin. The

Unlock Bypass mode facilitates faster programming times by requiring only two

write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates

the Embedded Erase algorithm—an internal algorithm that automatically

preprograms the array (if it is not already programmed) before executing the

erase operation. During erase, the device automatically times the erase pulse

widths and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by

observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (tog-

gle) status bits. After a program or erase cycle is completed, the device is ready

to read array data or accept another command.

The sector erase architecture allows memory sectors to be erased and repro-

grammed without affecting the data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low VCC detector that automat-

ically inhibits write operations during power transitions. The hardware sector

protection feature disables both program and erase operations in any combina-

tion of the sectors of memory. This can be achieved in-system or via

programming equipment.

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Manufacturer	Part #	Datasheet	Description
Advanced Micro Devices	AM29LV400B	382Kb / 14P	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
	AM29LV400	516Kb / 40P	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
	AM29LV400B	47Kb / 7P	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
SPANSION	AM29LV400BT-90EC	1Mb / 48P	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
	AM29LV400BB-90EC	1Mb / 48P	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
	AM29LV400BT-70EI	1Mb / 48P	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
	AM29LV400BT-70SC	1Mb / 48P	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices	AM29LV004B-1	769Kb / 40P	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
	AM29LV004	455Kb / 36P	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
	AM29LV004B	39Kb / 6P	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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S29AL004D90BFI022 Datasheet(PDF) 5 Page - SPANSION

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