NCV7720 datasheet(6/26 Pages) ONSEMI

Part #	NCV7720

Description	Deca Half-Bridge Driver

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Manufacturer	ONSEMI [ON Semiconductor]

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NCV7720

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6

ELECTRICAL CHARACTERISTICS

(−40

°C ≤ TJ ≤ 150°C, 5.5 V ≤ VSx ≤ 40 V, 3.15 V ≤ VCC ≤ 5.25 V, EN = VCC, unless otherwise specified.)

Characteristic

Symbol

Conditions

Min

Typ

Max

Unit

POWER SUPPLIES

Supply Current (VS1 + VS2)

Sleep Mode

IqVSx85

VS1 = VS2 = 13.2V, VCC = 0 V

−40

°C to 85°C

−

1.0

2.5

mA

Supply Current (VS1 + VS2)

Active Mode

IvsOp

EN = VCC, 5.5V < VSx < 28 V

No Load

−

2.5

5.0

mA

Supply Current (Vcc)

Sleep Mode

Active Mode

IqVCC

IVCCOp

CSB = VCC, EN = SI = SCLK = 0 V

−40

°C to 85°C

EN = CSB = VCC, SI = SCLK = 0V

No Load

−

1.0

1.5

2.5

3.0

mA

Total Sleep Mode Current

I(VS1) + I(VS2) + I(VCC)

IqTot

Sleep Mode, −40

°C to 85°C

VS1 = VS2 = 13.2 V, No Load

−

2.0

5.0

mA

VCC Power−on Reset Threshold

VCCpor

VCC increasing

−

2.55

2.90

V

VSx Undervoltage Detection Threshold

VSxuv

VSx decreasing

3.5

4.1

4.5

V

VSx Undervoltage Detection

Hysteresis

VSxuHys

100

−

450

mV

VSx Overvoltage Detection Threshold

VsXov

VSx increasing

30

36

40

V

VSx Overvoltage Detection Hysteresis

VSxoHys

1

2.5

4

V

DRIVER OUTPUT CHARACTERISTICS

Output High RDS(on) (source)

RDSonHS

Iout = −500 mA, Vs = 13.2 V

VCC = 3.15 V

−

1.0

2.25

W

Output Low RDS(on) (sink)

RDSonLS

Iout = 500 mA, Vs =13.2 V

VCC = 3.15 V

−

1.0

2.25

W

Output Path RDS(HSx+LSx)

RDSonPath

Iout = |500| mA, TJ ≤ 125°C

−

4.0

W

Source Leakage Current

IsrcLkg13.2

IsrcLkg28

VCC = 5 V,OUT(1−10) = 0 V,

−40

°C to 85°C;

VSx = 13.2 V

VSx = 28 V

−1.0

−2.0

−

mA

Sink Leakage Current

IsnkLkg13.2

IsnkLkg28

VCC = 5 V;

OUT(1−10) = VSx = 13.2 V

OUT(1−10) = VSx = 28 V

−

1.0

2.0

mA

Overcurrent Shutdown Threshold

(Source)

IsdSrc

VCC = 5 V, VSx = 13.2 V

−2.0

−1.2

−0.8

A

Overcurrent Shutdown Threshold

(Sink)

IsdSnk

VCC = 5 V, VSx = 13.2 V

0.8

1.2

2.0

A

Over Current Delay Timer

TdOc

10

25

50

ms

Underload Detection Threshold

(Low Side)

IuldLS

VCC = 5 V, VSx = 13.2 V

2.0

11

20

mA

Underload Detection Delay Time

TdUld

VCC = 5 V, VSx = 13.2 V

200

350

600

ms

Body Diode Forward Voltage

IbdFwd

If = 500 mA

−

0.9

1.3

V

DRIVER OUTPUT SWITCHING CHARACTERISTICS

High Side Turn On Time

ThsOn

Vs = 13.2 V, Rload = 39 W

−

7.5

13

ms

High Side Turn Off Time

ThsOff

Vs = 13.2 V, Rload = 39 W

−

3.0

6.0

ms

Low Side Turn On Time

TlsOn

Vs = 13.2 V, Rload = 39 W

−

6.5

13

ms

Low Side Turn Off Time

TlsOff

Vs = 13.2 V, Rload = 39 W

−

2.0

5.0

ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Not production tested.

5. This is the minimum time the user must wait between SPI commands.

6. This is the minimum time the user must wait between consecutive SRR requests.

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