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NCV7703C Datasheet(PDF) 4 Page - ON Semiconductor |
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NCV7703C Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 20 page NCV7703C www.onsemi.com 4 MAXIMUM RATINGS Rating Value Unit Power Supply Voltage (VS) (DC) (AC), t < 500 ms, Ivs > −2 A −0.3 to 40 −1 V Output Pin OUTx (DC) (AC), t < 500 ms, IOUTx > −2 A −0.3 to 40 −1 V Pin Voltage (Logic Input pins, SI, SCLK, CSB, SO, EN, VCC) −0.3 to 5.5 V Output Current (OUTx) (DC) (AC) (50 ms pulse, 1 s period) −1.8 to 1.8 −5.0 to 5.0 A Electrostatic Discharge, Human Body Model, VS, OUT1, OUT2, OUT3 (Note 3) 6 kV Electrostatic Discharge, Human Body Model, all other pins (Note 3) 2 kV Electrostatic Discharge, Machine Model, VS, OUT1, OUT2, OUT3 (Note 3) 300 V Electrostatic Discharge, Machine Model, all other pins (Note 3) 200 V Operating Junction Temperature −40 to 150 °C Storage Temperature Range −55 to 150 °C Moisture Sensitivity Level (MAX 260 °C Processing) MSL3 − Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Parameters Test Conditions (Typical Value) Unit 14 Pin Fused SOIC Package min−pad board (Note 1) 1 ″ pad board (Note 2) Junction−to−Lead (psi−JL8, YJL8) or Pins 1, 7, 8, 14 23 22 °C/W Junction−to−Ambient (RqJA, qJA) 122 83 °C/W 1. 1−oz copper, 67 mm2 copper area, 0.062 ″ thick FR4. 2. 1−oz copper, 645 mm2 copper area, 0.062 ″ thick FR4. 3. This device series incorporates ESD protection and is characterized by the following methods: ESD HBM according to AEC−Q100−002 (EIA/JESD22−A114) ESD MM according to AEC−Q100−003 (EIA/JESD22−A115) |
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