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S300B Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part No. S300B
Description  Silicon Standard Recovery Diode
Download  3 Pages
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Maker  GENESIC [GeneSiC Semiconductor, Inc.]
Homepage  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

S300B Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 100 V - 600 V
IF = 300 A
Features
• High Surge Capability
DO-9 Package
• Types up to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
S300B (R)
S300D (R)
S300E (R)
S300G (R)
Unit
Repetitive peak reverse
V
100
200
300
400
V
S300B thru S300JR
S300J (R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recovery Diode
Conditions
600
2. Reverse polarity (R): Stud is anode.
pp
voltage
VRRM
100
200
300
400
V
RMS reverse voltage
VRMS
70
140
212
280
V
DC blocking voltage
VDC
100
200
300
400
V
Continuous forward
current
IF
300
300
300
300
A
Operating temperature
Tj
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Parameter
Symbol
S300B (R)
S300D (R)
S300E (R)
S300G (R)
Unit
Diode forward voltage
1.2
1.2
1.2
1.2
10
10
10
10
μA
12
12
12
12
mA
Thermal characteristics
Thermal resistance,
junction - case
RthJC
0.16
0.16
0.16
0.16
°C/W
A
6850
VR = 100 V, Tj = 25 °C
IF = 300 A, Tj = 25 °C
TC ≤ 130 °C
Conditions
6850
6850
300
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half Sine
Wave
IF,SM
Reverse current
IR
VF
-55 to 150
S300J (R)
10
VR = 100 V, Tj = 175 °C
0.16
1.2
12
V
-55 to 150
TC = 25 °C, tp = 8.3 ms
6850
6850
600
420
600
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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