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S34MS02G1 Datasheet(PDF) 1 Page - Cypress Semiconductor |
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S34MS02G1 Datasheet(HTML) 1 Page - Cypress Semiconductor |
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1 / 71 page  Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 002-00330 Rev. *K Revised April 20, 2017 S34MS01G1 S34MS02G1 S34MS04G1 1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded Distinctive Characteristics Density – 1 Gb / 2 Gb / 4 Gb Architecture – Input / Output Bus Width: 8 bits / 16 bits – Page size: – ×8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – ×16 = 1056 (1024 + 32) words; 32 words is spare area – Block size: 64 pages – ×8 = 128 KB + 4 KB – ×16 = 64k + 2k words – Plane size: – 1 Gb / 2 Gb: 1024 Blocks per Plane ×8 = 128 MB + 4 MB ×16 = 64M + 2M words – 4 Gb: 2048 blocks per plane ×8 = 256 MB + 8 MB ×16 = 128M + 4M words – Device size: – 1 Gb: 1 Plane per Device or 128 MB – 2 Gb: 2 Planes per Device or 256 MB – 4 Gb: 2 Planes per Device or 512 MB NAND flash interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data, and Commands multiplexed Supply voltage – 1.8-V device: Vcc = 1.7 V ~ 1.95 V Security – One Time Programmable (OTP) area – Hardware program/erase disabled during power transition Additional features – 2 Gb and 4 Gb parts support Multiplane Program and Erase commands – Supports Copy Back Program – 2 Gb and 4 Gb parts support Multiplane Copy Back Program – Supports Read Cache Electronic signature – Manufacturer ID: 01h Operating temperature – Industrial: –40 °C to 85 °C – Industrial Plus: –40 °C to 105 °C Performance Page Read / Program – Random access: 25 µs (Max) – Sequential access: 45 ns (Min) – Program time / Multiplane Program time: 250 µs (Typ) Block Erase (S34MS01G1) – Block Erase time: 2.0 ms (Typ) Block Erase / Multiplane Erase (S34MS02G1, S34MS04G1) – Block Erase time: 3.5 ms (Typ) Reliability – 100,000 Program / Erase cycles (Typ) (with 1-bit ECC per 528 bytes (×8) or 264 words (×16)) – 10-year Data retention (Typ) – For one plane structure (1-Gb density) – Block zero is valid and will be valid for at least 1,000 program- erase cycles with ECC – For two plane structures (2-Gb and 4-Gb densities) – Blocks zero and one are valid and will be valid for at least 1,000 program-erase cycles with ECC Package options – Pb-free and Low Halogen – 48-Pin TSOP 12 x 20 x 1.2 mm – 63-Ball BGA 9 x 11 x 1 mm |
Similar Part No. - S34MS02G1 |
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Similar Description - S34MS02G1 |
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