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HMC1086 Datasheet(PDF) 1 Page - Analog Devices

Part # HMC1086
Description  25 WATT GaN MMIC POWER AMPLIFIER
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

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1
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Functional Diagram
Features
Typical Applications
General Description
High Psat: +44.5 dBm
Power Gain at Psat: 14 dB
High Output IP3: +48 dBm
Small Signal Gain: 22 dB
Supply Voltage: +28 V @ 1.1 A
50 Ohm Matched Input/Output
Die Size: 3.4 x 4 x 0.1 mm2
The HMC1086 is a 25W Gallium Nitride (GaN) Power
Amplifier MMIC which operates between 2 and 6 GHz.
The amplifier typically provides 22 dB of small signal
gain, +44.5 dBm of saturated output power, and
+48 dBm output IP3 at +33 dBm output power per
tone. The HMC1086 draws 1100 mA quiescent current
from a +28V DC supply. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCM). All electrical performance
data was acquired with die eutectically attached to
1.02 mm (40 mil) thick CuMo carrier with multiple
1.0 mil diameter ball bonds connecting the die to
50 Ohm transmission lines on alumina.
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2 - 3.5
3.5 - 5
5 - 6
GHz
Small Signal Gain
21
22
22
23
21
22
dB
Gain Flatness
±0.5
±0.5
±0.5
dB
Gain Variation Over Temperature
0.012
0.016
0.024
dB/
°C
Input Return Loss
10
15
15
dB
Output Return Loss
8
8
8
dB
Power Gain (Pin @ 25 dBm)
18
18
18
dB
Saturated Output Power (Psat)
44.5
45
44.5
dBm
Output Third Order Intercept (IP3) [2]
48
48
48
dBm
Power Added Efficiency
42
37
34
%
Quiescent Supply Current
(Idd @ Vdd = +28V)
1100
1100
1100
mA
[1] Assumes eutectic attach of die to a 40 mil CuMo carrier, and 25
°C is maintained at the back of the carrier.
[2] Measurement taken at Pout / tone = +33 dBm.
The HMC1086 is ideal for:
• Test Instrumentation
• General Communications
• Radar
Electrical Specifications, T
A = +25 °C, Vdd = VD1 = VD2 = +28V, Idd = 1100 mA
[1]


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