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SI3909DV Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI3909DV
Description  Dual P-Channel 20-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3909DV Datasheet(HTML) 2 Page - Vishay Siliconix

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Vishay Siliconix
SPICE Device Model Si3909DV
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = − 250 µA
1.1
V
On-State Drain Current
a
ID(on)
VDS = −5 V, VGS = −4.5 V
14
A
VGS = −4.5 V, ID = − 1.8 A
0.18
0.16
VGS = −3.6 V, ID = −1.6 A
0.19
0.19
Drain-Source On-State Resistance
a
rDS(on)
VGS = −2.5 V, ID = −1 A
0.25
0.28
Forward Transconductance
a
gfs
VDS = −10 V, ID = −1.8 A
3.6
3.6
S
Diode Forward Voltage
a
VSD
IS = −1.05 A, VGS = 0 V
−0.78
−0.83
V
Dynamic
b
Total Gate Charge
Qg
2.5
2.7
Gate-Source Charge
Qgs
0.40
0.40
Gate-Drain Charge
Qgd
VDS = −10 V, VGS = −4.5 V, ID = −1.8 A
0.60
0.60
nC
Turn-On Delay Time
td(on)
10
11
Rise Time
tr
8
34
Turn-Off Delay Time
td(off)
52
19
Fall Time
tf
VDD = −10 V, RL = 10 Ω
ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω
7
24
Source-Drain Reverse Recovery Time
trr
IF = −1.05 A, di/dt = 100 A/µs
20
20
ns
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 71511
S-50836
Rev. B, 16-May-05


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