SFD30N06 datasheet(4/7 Pages) ETC

Part #	SFD30N06

Description	N-Channel MOSFET

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10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

N o te s :

※

1 . Z

θ JC( t) = 2.85

/W M a x .

℃

2 . D u ty F a c to r, D = t

1 /t2

3 . T

JM - T C = P DM * Z θ JC(t)

s ingle pu ls e

D= 0 .5

0.0 2

0.2

0.05

0.1

0.01

t

1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

25

50

75

100

125

150

0

5

10

15

20

25

T

C' Case Temperature [

oC]

10

-1

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

10

3

DC

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R

DS(on)

Notes :

※

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

Notes :

※

1. V

GS = 10 V

2. I

D = 11.5 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes :

※

1. V

GS = 0 V

2. I

D = 250 µ A

T

J, Junction Temperature [

oC]

Fig 9. Maximum Safe Operating Area

Fig 10. Maximum Drain Current

vs. Case Temperature

Fig 11. Transient Thermal Response Curve

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

Fig 8. On-Resistance Variation

vs. Junction Temperature

SFD30N06

4/7

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