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SCP6C60 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. SCP6C60
Description  SILICON CONTROLLED RECTIFIERS
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SCP6C60 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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Absolute Maximum Ratings ( T
J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(AV)
Average On-State Current
Half Sine Wave : TC = 109 °C
3.8
A
IT(RMS)
R.M.S On-State Current
180° Conduction Angle
6
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
66
A
I2t
I2t for Fusing
t = 8.3ms
21
A2s
di/dt
Critical rate of rise of on-state current
50
A/
PGM
Forward Peak Gate Power Dissipation
5
W
PG(AV)
Forward Average Gate Power Dissipation
0.5
W
IFGM
Forward Peak Gate Current
2
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
SCP6C60
Aug, 2003. Rev. 1
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
3. Gate
1. Cathode
Symbol
1/5
SemiWell Semiconductor
Silicon Controlled Rectifiers
2. Anode
1
2
3
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
TO-220
Information offers: http://www.kkg.com.cn


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