1

PNZ155 (PN155)

Silicon NPN Phototransistor

For optical control systems

Phototransistors

Unit : mm

0.8

±0.1

3.5

±0.15

4.5

±0.15

2.54

±0.2

0.45

±0.2

2-0.45

±0.15

2-1.2

±0.3

1.6

±0.15

2.1

±0.15

12

1: Emitter

2: Collector

(Input pulse)

(Output pulse)

50

Ω

increase from 10% to 90% of its final value)

decrease from 90% to 10% of its initial value)

Sig.OUT

10%

90%

Sig.IN

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

Collector to emitter voltage

20

V

Emitter to collector voltage

5V

Collector current

10

mA

Collector power dissipation

100

mW

Operating ambient temperature

–25 to +85

˚C

Storage temperature

–30 to +100

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Dark current

0.01

1

µA

Collector photo current

0.05

0.2

mA

Peak sensitivity wavelength

λ

P

800

nm

Acceptance half angle

θ

Measured from the optical axis to the half power point

70

deg.

Response time

4

µs

Collector saturation voltage

0.2

0.5

V

Features

High sensitivity

Wide spectral sensitivity, suited for detecting GaAs LEDs

Low dark current

Flat type plastic package

Note) The part number in the parenthesis shows conventional part number.