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NSQA6V8AW5T2 Datasheet(PDF) 2 Page - ON Semiconductor |
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NSQA6V8AW5T2 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NSQA6V8AW5T2 Series http://onsemi.com 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Power Dissipation 8 20 msec Double Exponential Waveform (Note 1) PPK 20 W Steady State Power − 1 Diode (Note 2) PD 380 mW Thermal Resistance − Junction−to−Ambient Above 25 °C, Derate RqJA 327 3.05 °C/W mW/ °C Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum 10 Seconds Duration TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) NSQA6V8AW5T2 Characteristic Symbol Min Typ Max Unit Breakdown Voltage (IT = 1 mA) (Note 3) VBR 6.4 6.8 7.1 V Leakage Current (VRWM = 5.0 V) IR − − 1.0 mA Clamping Voltage 1 (IPP = 1.6 A, 8 20 msec Waveform) VC − − 13 V Maximum Peak Pulse Current (8 20 msec Waveform) IPP − − 1.6 A Junction Capacitance − (VR = 0 V, f = 1 MHz) − (VR = 3.0 V, f = 1 MHz) CJ − − 12 6.7 15 9.5 pF NSQA12VAW5T2 Breakdown Voltage (IT = 5 mA) (Note 3) VBR 11.4 12.0 12.7 V Leakage Current (VRWM = 9.0 V) IR − − 0.05 mA Zener Impedence (IT = 5 mA) ZZ − − 30 W Clamping Voltage 1 (IPP = 0.9 A, 8 20 msec Waveform) VC − − 23 V Maximum Peak Pulse Current (8 20 msec Waveform) IPP − − 0.9 A Junction Capacitance − (VR = 0 V, f = 1 MHz) CJ − − 15 pF 3. VBR is measured at pulse test current IT. |
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