NSQA6V8AW5T2 datasheet(2/4 Pages) ONSEMI

Part #	NSQA6V8AW5T2

Description	Low Capacitance Quad Array for ESD Protection

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NSQA6V8AW5T2 Series

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MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Power Dissipation

8

20

msec Double Exponential Waveform (Note 1)

PPK

20

W

Steady State Power − 1 Diode (Note 2)

PD

380

mW

Thermal Resistance −

Junction−to−Ambient

Above 25

°C, Derate

RqJA

327

3.05

°C/W

mW/

°C

Operating Junction Temperature Range

TJ

−40 to +125

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Lead Solder Temperature − Maximum 10 Seconds Duration

TL

260

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. Non−repetitive current pulse per Figure 1.

2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

NSQA6V8AW5T2

Characteristic

Symbol

Min

Typ

Max

Unit

Breakdown Voltage (IT = 1 mA) (Note 3)

VBR

6.4

6.8

7.1

V

Leakage Current (VRWM = 5.0 V)

IR

−

1.0

mA

Clamping Voltage 1 (IPP = 1.6 A, 8

20

msec Waveform)

VC

−

13

V

Maximum Peak Pulse Current (8

20

msec Waveform)

IPP

−

1.6

A

Junction Capacitance − (VR = 0 V, f = 1 MHz)

− (VR = 3.0 V, f = 1 MHz)

CJ

−

12

6.7

15

9.5

pF

NSQA12VAW5T2

Breakdown Voltage (IT = 5 mA) (Note 3)

VBR

11.4

12.0

12.7

V

Leakage Current (VRWM = 9.0 V)

IR

−

0.05

mA

Zener Impedence (IT = 5 mA)

ZZ

−

30

W

Clamping Voltage 1 (IPP = 0.9 A, 8

20

msec Waveform)

VC

−

23

V

Maximum Peak Pulse Current (8

20

msec Waveform)

IPP

−

0.9

A

Junction Capacitance − (VR = 0 V, f = 1 MHz)

CJ

−

15

pF

3. VBR is measured at pulse test current IT.

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