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KBL601G Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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KBL601G Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 50 V - 400 V IO = 6 A Features • Ideal for printed circuit board KBL Package • Not ESD Sensitive Mechanical Data Case: Molded plastic Polarity: Marked on body Weight: 0.167 ounce, 5 grams Mounting position: Any • Reliable low cost construction utilizing molded plastic technique Single Phase Glass Passivated Silicon Bridge Rectifier KBL601G thru KBL604G Mi ti t T 25 °C l th i ifi d • High surge current capability • Types from 50 V to 400 V VRRM Terminals: Plated terminals, solderable per MIL-STD- 202F, Method 208 Parameter Symbol KBL601G KBL602G Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol KBL601G KBL602G Unit Maximum average forward rectified current IO 66 A Peak forward surge current IFSM 180 180 A Maximum instantaneous forward voltage per leg 1.1 1.1 55 100 100 Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Ta = 50 °C 66 single sine-wave 180 180 100 Maximum reverse current at rated DC blocking voltage per leg IR VF V Electrical characteristics at Tj = 25 °C, unless otherwise specified Conditions 400 280 400 200 Ta = 25 °C IF = 6 A Conditions KBL604G 200 140 KBL603G -55 to 150 Maximum ratings at Tj = 25 °C, unless otherwise specified -55 to 150 -55 to 150 μA -55 to 150 KBL604G 55 KBL603G Ta = 125 °C 1.1 1.1 100 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 |
Similar Part No. - KBL601G_16 |
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Similar Description - KBL601G_16 |
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