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FSS239 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part No. FSS239
Description  Load Switching Applications
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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FSS239 Datasheet(HTML) 1 Page - Sanyo Semicon Device

   
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FSS239
No.6582-1/4
Features
Low ON resistance.
2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6582
FSS239
Package Dimensions
unit : mm
2185
[FSS239]
52600 TS IM TA-2977
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
14
5
8
0.2
5.0
0.595
1.27
0.43
1 : No Contact
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
7A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
52
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (1000mm2! 0.8mm)
1.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
|yfs|
VDS=10V, ID=7A
10.9
15.5
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=7A, VGS=4V
24
32
m
RDS(on)2
ID=2A, VGS=2.5V
29
42
m
Marking : S239
Continued on next page.


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