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FF150R17ME3G Datasheet(PDF) 2 Page - Infineon Technologies AG |
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FF150R17ME3G Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page 2 TechnischeInformation/TechnicalInformation FF150R17ME3G IGBT-Module IGBT-modules preparedby:CU approvedby:MK dateofpublication:2013-10-03 revision:2.1 VorläufigeDaten PreliminaryData Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 1700 V Dauergleichstrom ContinuousDCforwardcurrent IF 150 A PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 300 A Grenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 3800 A²s CharakteristischeWerte/CharacteristicValues min. typ. max. Durchlassspannung Forwardvoltage IF = 150 A, VGE = 0 V IF = 150 A, VGE = 0 V VF 1,80 1,90 2,20 V V Tvj = 25°C Tvj = 125°C Rückstromspitze Peakreverserecoverycurrent IF = 150 A, - diF/dt = 2100 A/µs (Tvj=125°C) VR = 900 V VGE = -15 V IRM 175 190 A A Tvj = 25°C Tvj = 125°C Sperrverzögerungsladung Recoveredcharge IF = 150 A, - diF/dt = 2100 A/µs (Tvj=125°C) VR = 900 V VGE = -15 V Qr 39,0 65,5 µC µC Tvj = 25°C Tvj = 125°C AbschaltenergieproPuls Reverserecoveryenergy IF = 150 A, - diF/dt = 2100 A/µs (Tvj=125°C) VR = 900 V VGE = -15 V Erec 20,0 36,0 mJ mJ Tvj = 25°C Tvj = 125°C Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proDiode/perdiode RthJC 0,21 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proDiode/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,05 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 125 °C NTC-Widerstand/NTC-Thermistor CharakteristischeWerte/CharacteristicValues min. typ. max. Nennwiderstand Ratedresistance TC = 25°C R25 5,00 k Ω AbweichungvonR100 DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 % Verlustleistung Powerdissipation TC = 25°C P25 20,0 mW B-Wert B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-Wert B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-Wert B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K AngabengemäßgültigerApplicationNote. Specificationaccordingtothevalidapplicationnote. |
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