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FF150R17ME3G Datasheet(PDF) 6 Page - Infineon Technologies AG |
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FF150R17ME3G Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 8 page 6 TechnischeInformation/TechnicalInformation FF150R17ME3G IGBT-Module IGBT-modules preparedby:CU approvedby:MK dateofpublication:2013-10-03 revision:2.1 VorläufigeDaten PreliminaryData SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=9.1 Ω,VCE=900V IF [A] 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 45 50 Erec, Tvj = 125°C SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=150A,VCE=900V RG [ Ω] 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 35 40 45 50 Erec, Tvj = 125°C TransienterWärmewiderstandDiode,Wechselrichter transientthermalimpedanceDiode,Inverter ZthJC=f(t) t [s] 0,001 0,01 0,1 1 0,001 0,01 0,1 1 ZthJC : Diode i: ri[K/W]: τi[s]: 1 0,021 0,01 2 0,063 0,04 3 0,084 0,06 4 0,042 0,2 NTC-Widerstand-Temperaturkennlinie(typisch) NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) TC [°C] 0 20 40 60 80 100 120 140 160 100 1000 10000 100000 Rtyp |
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