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FP15R12W1T4P_B11 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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FP15R12W1T4P_B11 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 12 page Datasheet 8 V3.0 2017-05-04 FP15R12W1T4P_B11 SchaltverlusteIGBT,Wechselrichter(typisch) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=15A,VCE=600V RG [ Ω] 0 40 80 120 160 200 240 280 320 360 400 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C TransienterWärmewiderstandIGBT,Wechselrichter transientthermalimpedanceIGBT,Inverter ZthJH=f(t) t [s] 0,001 0,01 0,1 1 10 0,1 1 10 ZthJH : IGBT i: ri[K/W]: τi[s]: 1 0,1296 0,0006835 2 0,211 0,007886 3 0,4887 0,0475 4 0,8107 0,123 SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter (RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=39 Ω,Tvj=150°C VCE [V] 0 200 400 600 800 1000 1200 1400 0 3 6 9 12 15 18 21 24 27 30 33 36 IC, Modul IC, Chip DurchlasskennliniederDiode,Wechselrichter(typisch) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) VF [V] 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 3 6 9 12 15 18 21 24 27 30 Tvj = 25°C Tvj = 125°C Tvj = 150°C |
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