For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

4

HMC518

v02.0217

GaAs pHEMT MMIC LOW NOISE

AMPLIFIER, 20 - 32 GHz

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

+5.5 Vdc

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

+7 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 29 mW/°C above 85 °C)

2.65 W

Thermal Resistance

(channel to die bottom)

54.6 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

ESD Sensitivity (HBM)

Class 1A

Vdd (Vdc)

Idd (mA)

+2.5

61

+3.0

65

+3.5

69

Typical Supply Current vs. Vdd

Note: Amplifier will operate over full voltage ranges shown

above.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.