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TMS44409 Datasheet(PDF) 17 Page - Texas Instruments |
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TMS44409 Datasheet(HTML) 17 Page - Texas Instruments |
17 / 26 page TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 – JULY1995 17 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS CAS A0 – A9 W OE DQ1 – DQ4 Row Column Don’t Care See Note A See Note A Don’t Care Valid In tRP Valid Data In Don’t Care Don’t Care Don’t Care Don’t Care Don’t Care Column tRASP tCSH tHPC tRSH tCAS tRCD tASC tRAH tCAH tCP tASR tWP tCWL tRWL tDH tDH tDS tDS tOEH tOEH tOED tRAL tCRP tCWL tRAD tCAL NOTES: A. Referenced to CAS or W, whichever occurs last. B. A read cycle or a read-write cycle can be intermixed with write cycles as long as read and read-write timing specifications are not violated. Figure 9. EDO-Write-Cycle Timing |
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