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HIP6311A Datasheet(PDF) 15 Page - Renesas Technology Corp

Part No. HIP6311A
Description  Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP6311A Datasheet(HTML) 15 Page - Renesas Technology Corp

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HIP6311A
FN9035 Rev 1.00
Page 15 of 16
July 2004
Considerations section. With all else fixed, decreasing the
inductance could increase the power dissipated in the
MOSFETs by 30%.
Input Capacitor Selection
The important parameters for the bulk input capacitors are the
voltage rating and the RMS current rating. For reliable operation,
select bulk input capacitors with voltage and current ratings above
the maximum input voltage and largest RMS current required by
the circuit. The capacitor voltage rating should be at least 1.25
times greater than the maximum input voltage and a voltage
rating of 1.5 times is a conservative guideline. The RMS current
required for a multi-phase converter can be approximated with the
aid of Figure 13.
First determine the operating duty ratio as the ratio of the
output voltage divided by the input voltage. Find the Current
Multiplier from the curve with the appropriate power channels.
Multiply the current multiplier by the full load output current.
The resulting value is the RMS current rating required by the
input capacitor.
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use ceramic capacitance for
the high frequency decoupling and bulk capacitors to supply the
RMS current. Small ceramic capacitors should be placed very
close to the drain of the upper MOSFET to suppress the voltage
induced in the parasitic circuit impedances.
For bulk capacitance, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX
or equivalent) may be needed. For surface mount designs,
solid tantalum capacitors can be used, but caution must be
exercised with regard to the capacitor surge current rating.
These capacitors must be capable of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge current tested.
MOSFET Selection and Considerations
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the dominant
design factors. The power dissipation includes two loss
components; conduction loss and switching loss. These losses
are distributed between the upper and lower MOSFETs
according to duty factor (see the following equations). The
conduction losses are the main component of power
dissipation for the lower MOSFETs, Q2 and Q4 of Figure 1.
Only the upper MOSFETs, Q1 and Q3 have significant
switching losses, since the lower device turns on and off into
near zero voltage.
The equations assume linear voltage-current transitions and
do not model power loss due to the reverse-recovery of the
lower MOSFETs body diode. The gate-charge losses are
dissipated by the Driver IC and don't heat the MOSFETs.
However, large gate-charge increases the switching time, tSW
which increases the upper MOSFET switching losses. Ensure
that both MOSFETs are within their maximum junction
temperature at high ambient temperature by calculating the
temperature rise according to package thermal-resistance
specifications. A separate heatsink may be necessary
depending upon MOSFET power, package type, ambient
temperature and air flow.
A diode, anode to ground, may be placed across Q2 and Q4.
These diodes function as a clamp that catches the negative
inductor swing during the dead time between the turn off of the
lower MOSFETs and the turn on of the upper MOSFETs. The
diodes must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is usually acceptable
to omit the diodes and let the body diodes of the lower
MOSFETs clamp the negative inductor swing, but efficiency
could drop one or two percent as a result. The diode's rated
reverse breakdown voltage must be greater than the maximum
input voltage.
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
DUTY CYCLE (VO/VIN)
SINGLE
CHANNEL
2 CHANNEL
3 CHANNEL
4 CHANNEL
FIGURE 12. RIPPLE CURRENT vs DUTY CYCLE
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
0.5
DUTY CYCLE (VO/VIN)
SINGLE
CHANNEL
3 CHANNEL
4 CHANNEL
2 CHANNEL
FIGURE 13. CURRENT MULTIPLIER vs DUTY CYCLE
PUPPER
IO
2
rDS ON

VOUT
VIN
------------------------------------------------------------
IO VIN
tSW
FSW
2
----------------------------------------------------------
+
=
PLOWER
IO
2
rDS ON

VIN VOUT

VIN
---------------------------------------------------------------------------------
=


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