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HIP6311A Datasheet(PDF) 13 Page - Renesas Technology Corp

Part No. HIP6311A
Description  Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP6311A Datasheet(HTML) 13 Page - Renesas Technology Corp

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HIP6311A
FN9035 Rev 1.00
Page 13 of 16
July 2004
As discussed previously, the voltage drop across each Q2
transistor at the point in time when current is sampled is rDSON
(Q2) x ISAMPLE. The voltage at Q2’s drain, the PHASE node,
is applied through the RISEN resistor to the HIP6311A ISEN
pin. This pin is held at virtual ground, so the current into ISEN
is:
ISENSE = ISAMPLE x rDS(ON) (Q2) / RISEN.
RIsen
= ISAMPLE x rDS(ON) (Q2) / 50A
Example: From the previous conditions,
where ILT
= 100A,
ISAMPLE
= 25.49A,
rDS(ON) (Q2)
= 4m
Then: RISEN
= 2.04K and
ICURRENT TRIP = 165%
Short circuit ILT = 165A.
Channel Frequency Oscillator
The channel oscillator frequency is set by placing a resistor,
RT, to ground from the FS/DIS pin. Figure 10 is a curve
showing the relationship between frequency, FSW, and resistor
RT. To avoid pickup by the FS/DIS pin, it is important to place
this resistor next to the pin. If this pin is also used to disable the
converter, it is also important to locate the pull-down device
next to this pin.
Layout Considerations
MOSFETs switch very fast and efficiently. The speed with
which the current transitions from one device to another
causes voltage spikes across the interconnecting impedances
and parasitic circuit elements. These voltage spikes can
degrade efficiency, radiate noise into the circuit and lead to
device over-voltage stress. Careful component layout and
printed circuit design minimizes the voltage spikes in the
converter. Consider, as an example, the turnoff transition of
the upper PWM MOSFET. Prior to turnoff, the upper MOSFET
was carrying channel current. During the turnoff, current stops
flowing in the upper MOSFET and is picked up by the lower
MOSFET. Any inductance in the switched current path
generates a large voltage spike during the switching interval.
Careful component selection, tight layout of the critical
components, and short, wide circuit traces minimize the
magnitude of voltage spikes. Contact Intersil for evaluation
board drawings of the component placement and printed circuit
board.
There are two sets of critical components in a DC-DC
converter using a HIP6311A controller and a HIP6601 gate
driver. The power components are the most critical because
they switch large amounts of energy. Next are small signal
components that connect to sensitive nodes or supply critical
bypassing current and signal coupling.
The power components should be placed first. Locate the input
capacitors close to the power switches. Minimize the length of
the connections between the input capacitors, CIN, and the
power switches. Locate the output inductors and output
capacitors between the MOSFETs and the load. Locate the
gate driver close to the MOSFETs.
The critical small components include the bypass capacitors
for VCC and PVCC on the gate driver ICs. Locate the bypass
capacitor, CBP, for the HIP6311A controller close to the
device. It is especially important to locate the resistors
associated with the input to the amplifiers close to their
respective pins, since they represent the input to feedback
amplifiers. Resistor RT, that sets the oscillator frequency
should also be located next to the associated pin. It is
especially important to place the RSEN resistor(s) at the
respective terminals of the HIP6311A.
A multi-layer printed circuit board is recommended. Figure 11
shows the connections of the critical components for one output
channel of the converter. Note that capacitors CIN and COUT
could each represent numerous physical capacitors. Dedicate
one solid layer, usually the middle layer of the PC board, for a
ground plane and make all critical component ground
connections with vias to this layer. Dedicate another solid layer
as a power plane and break this plane into smaller islands of
common voltage levels. Keep the metal runs from the PHASE
terminal to inductor LO1 short. The power plane should support
the input power and output power nodes. Use copper filled
polygons on the top and bottom circuit layers for the phase
nodes. Use the remaining printed circuit layers for small signal
wiring. The wiring traces from the driver IC to the MOSFET gate
and source should be sized to carry at least one ampere of
current.
50
100
10
20
200
500 1,000
5,000 10,000
2,000
1
2
5
10
20
50
100
200
500
1,000
CHANNEL OSCILLATOR FREQUENCY, FSW (kHz)
FIGURE 10. RESISTANCE RT vs FREQUENCY


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