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HIP6311 Datasheet(PDF) 16 Page - Renesas Technology Corp

Part No. HIP6311
Description  Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP6311 Datasheet(HTML) 16 Page - Renesas Technology Corp

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HIP6311
FN4817 Rev 3.00
Page 16 of 17
December 27, 2004
dissipated by the Driver IC and don't heat the MOSFETs.
However, large gate-charge increases the switching time,
tSW which increases the upper MOSFET switching losses.
Ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature by
calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
A diode, anode to ground, may be placed across Q2 and Q4.
These diodes function as a clamp that catches the negative
inductor swing during the dead time between the turn off of
the lower MOSFETs and the turn on of the upper MOSFETs.
The diodes must be a Schottky type to prevent the lossy
parasitic MOSFET body diode from conducting. It is usually
acceptable to omit the diodes and let the body diodes of the
lower MOSFETs clamp the negative inductor swing, but
efficiency could drop one or two percent as a result. The
diode's rated reverse breakdown voltage must be greater
than the maximum input voltage.
PUPPER
IO
2
rDS ON

VOUT
VIN
------------------------------------------------------------
IO VIN
tSW
FSW
2
----------------------------------------------------------
+
=
PLOWER
IO
2
rDS ON

VIN VOUT

VIN
---------------------------------------------------------------------------------
=


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