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TB31262F Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TB31262F
Description  TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TB31262F Datasheet(HTML) 1 Page - Toshiba Semiconductor

 
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TB31262F
2001-12-26
1
TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic
T B 3 1 2 6 2 F
RF 1chip IC for 900 MHz Cordless Telephone
One package involve three systems about RF, IF, and AF.
Involving LNA, MIX, PA, VCO (TX,RX), PLL, IF-AMP, Detecter,
Compander,and 4 useful audio amplifiers. It is possible to reduce
many external parts. This IC is suitable for ISM 900 MHz
cordless telephone.
Features
Same system & software almost compatible as TB31261AF
(Single Conversion, IF Frequency: 10.7 MHz,)
Built-in LNA
Built-in 1’st MIX
→ Double Balanced MIX (DBM) Type.
Built-in Differential VCO, Variable capacitor (TX, RX) and
Doubler (450 MHz × 2)
Built-in PA
• A substitution from TB31261AF is easy
(Same package, Software almost compatible)
• Low operating voltage: VCC = 2.0~5.0 V
• Current operating current: ICC = 70 mA (All On)
• PLL operating frequency :around 450 MHz
• Serial control for all status
• Built in pre-amp, receiver-amp, mic-amp, and spl-amp
• Receiver output Level adjustment.
• Variable battery alarm setting. (7 thresholds)
• Built in battery saving function for Intermittent receiving.
• Small package: QFP52pin (0.65 mm pitch)
Handle with care to prevent devices from deterioration by static electricity.
QFP52-P-1010-0.65


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