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FR85B02 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # FR85B02
Description  Silicon Fast Recovery Diode
Download  3 Pages
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

FR85B02 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  FR85B02 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. FR85B02 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. FR85B02 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 100 V - 600 V
IF = 85 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
FR85B(R)02
FR85D(R)02
FR85G(R)02
Unit
Repetitive peak reverse
V
100
200
400
V
• Types from 100 V to 600 V VRRM
2. Reverse polarity (R): Stud is anode.
FR85B02 thru FR85JR02
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recovery Diode
FR85J(R)02
600
pp
voltage
VRRM
100
200
400
V
RMS reverse voltage
VRMS
70
140
280
V
DC blocking voltage
VDC
100
200
400
V
Continuous forward current
IF
85
85
85
A
Operating temperature
Tj
-55 to 150
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
-55 to 150
°C
Parameter
Symbol
FR85B(R)02
FR85D(R)02
FR85G(R)02
Unit
Diode forward voltage
1.3
1.3
1.3
25
25
25
μA
20
20
20
mA
Recovery Time
Maximum reverse recovery
time
TRR
200
200
200
nS
Reverse current
IR
VF
VR = 100 V, Tj = 25 °C
IF = 85 A, Tj = 25 °C
TC ≤ 100 °C
Conditions
1369
1369
TC = 25 °C, tp = 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
250
A
1369
-55 to 150
-55 to 150
FR85J(R)02
1.3
600
420
600
85
1369
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
VR = 100 V, Tj = 125 °C
V
25
20
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1


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