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SI7901EDN Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7901EDN Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 5 page  Si7901EDN Vishay Siliconix New Product www.vishay.com 4 Document Number: 71430 S-03710—Rev. A, 14-May-01 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) –0.2 –0.1 0.0 0.1 0.2 0.3 0.4 –50 –25 0 25 50 75 100 125 150 ID = 800 mA 1.2 1.8 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 1234 5 1 10 20 ID = 6.3 A 0 0.3 0.6 0.9 Threshold Voltage TJ – Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0 10 50 Single Pulse Power, Junction-to-Ambient Time (sec) 30 40 10–3 10–2 1 10 600 10–1 10–4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.1 600 1 0.01 0.001 TJ = 25_C 20 1.5 TJ = 150_C 10 100 |
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