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SI7901EDN Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI7901EDN
Description  Dual P-Channel 20-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7901EDN Datasheet(HTML) 4 Page - Vishay Siliconix

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Si7901EDN
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71430
S-03710—Rev. A, 14-May-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
–0.2
–0.1
0.0
0.1
0.2
0.3
0.4
–50
–25
0
25
50
75
100
125
150
ID = 800 mA
1.2
1.8
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0
1234
5
1
10
20
ID = 6.3 A
0
0.3
0.6
0.9
Threshold Voltage
TJ – Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
0
10
50
Single Pulse Power, Junction-to-Ambient
Time (sec)
30
40
10–3
10–2
1
10
600
10–1
10–4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 75_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
0.1
600
1
0.01
0.001
TJ = 25_C
20
1.5
TJ = 150_C
10
100


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