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SI7901EDN Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7901EDN
Description  Dual P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7901EDN Datasheet(HTML) 2 Page - Vishay Siliconix

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Si7901EDN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71430
S-03710—Rev. A, 14-May-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –800 mA
–0.45
V
VDS = 0 V, VGS = "4.5 V
"1.5
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"10
mA
VDS = –16 V, VGS = 0 V
–1
m
Zero Gate Voltage Drain Current
IDSS
VDS = –16 V, VGS = 0 V, TJ = 85_C
–5
mA
On-State Drain Currenta
ID(on)
VDS v –5 V, VGS = –4.5 V
–20
A
VGS = –4.5 V, ID = –6.3 A
0.041
0.048
Drain-Source On-State Resistancea
rDS(on)
VGS = –2.5 V, ID = –5.3 A
0.057
0.068
W
DS(on)
VGS = –1.8 V, ID = –1 A
0.072
0.090
Forward Transconductancea
gfs
VDS = –15 V, ID = –6.3 A
14
S
Diode Forward Voltagea
VSD
IS = –2.3 A, VGS = 0 V
–0.8
–1.2
V
Dynamicb
Total Gate Charge
Qg
12
18
Gate-Source Charge
Qgs
VDS = –10 V, VGS = –4.5 V, ID = –6.3 A
2.5
nC
Gate-Drain Charge
Qgd
2.9
Turn-On Delay Time
td(on)
2.5
4
Rise Time
tr
VDD = –10 V, RL = 10 W
4
6
m
Turn-Off Delay Time
td(off)
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
15
23
ms
Fall Time
tf
12
18
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.001
100
10,000
Gate Current vs. Gate-Source Voltage
0
2
4
6
8
0
4
8
12
16
Gate-Current vs. Gate-Source Voltage
VGS – Gate-to-Source Voltage (V)
0.1
1
10
1,000
VGS – Gate-to-Source Voltage (V)
0
36
9
15
TJ = 25_C
0.01
12
TJ = 150_C


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