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SI7901EDN Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI7901EDN
Description  Dual P-Channel 20-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7901EDN Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 4500 V
D Ultra-Low Thermal Resistance, PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D Bidirectional Switch
Si7901EDN
Vishay Siliconix
New Product
Document Number: 71430
S-03710—Rev. A, 14-May-01
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.048 @ VGS = –4.5 V
–6.3
–20
0.068 @ VGS = –2.5 V
–5.3
0.090 @ VGS = –1.8 V
–4.6
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
Bottom View
PowerPAK
t 1212-8
P-Channel MOSFET
S1
D1
G1
3 k
W
P-Channel MOSFET
S2
D2
G2
3 k
W
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"12
V
_ a
TA = 25_C
–6.3
–4.3
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
–4.5
–3.1
Pulsed Drain Current
IDM
–20
A
continuous Source Current (Diode Conduction)a
IS
–2.3
–1.1
TA = 25_C
2.8
1.3
Maximum Power Dissipationa
TA = 85_C
PD
1.5
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v 10 sec
35
44
Maximum Junction-to-Ambienta
Steady State
RthJA
75
94
_C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4
5
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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