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SI7901EDN Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7901EDN Datasheet(HTML) 1 Page - Vishay Siliconix |
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FEATURES D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Bidirectional Switch Si7901EDN Vishay Siliconix New Product Document Number: 71430 S-03710—Rev. A, 14-May-01 www.vishay.com 1 Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.048 @ VGS = –4.5 V –6.3 –20 0.068 @ VGS = –2.5 V –5.3 0.090 @ VGS = –1.8 V –4.6 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 3.30 mm 3.30 mm Bottom View PowerPAK t 1212-8 P-Channel MOSFET S1 D1 G1 3 k W P-Channel MOSFET S2 D2 G2 3 k W ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "12 V _ a TA = 25_C –6.3 –4.3 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID –4.5 –3.1 Pulsed Drain Current IDM –20 A continuous Source Current (Diode Conduction)a IS –2.3 –1.1 TA = 25_C 2.8 1.3 Maximum Power Dissipationa TA = 85_C PD 1.5 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 10 sec 35 44 Maximum Junction-to-Ambienta Steady State RthJA 75 94 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4 5 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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