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SI1913DH Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI1913DH
Description  Dual P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1913DH Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
Si1913DH
Vishay Siliconix
New Product
Document Number: 71965
S-21482—Rev. A, 26-Aug-02
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.490 @ VGS = -4.5 V
-1.0
-20
0.750 @ VGS = -2.5 V
- 0.81
1.10 @ VGS = -1.8 V
- 0.67
Marking Code
DC
XX
Lot Traceability
and Date Code
Part # Code
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
S1
G1
D2
D1
G2
S2
D2
S2
G2
D1
S1
G1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
"8
V
_ a
TA = 25_C
- 1.0
-0.88
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
- 0.72
-0.63
Pulsed Drain Current
IDM
-3
A
Continuous Diode Current (Diode Conduction)a
IS
-0.61
-0.48
TA = 25_C
0.74
0.57
Maximum Power Dissipationa
TA = 85_C
PD
0.38
0.30
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v 5 sec
130
170
Maximum Junction-to-Ambienta
Steady State
RthJA
170
220
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
80
100
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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