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SI1913DH Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI1913DH Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  FEATURES D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch Si1913DH Vishay Siliconix New Product Document Number: 71965 S-21482—Rev. A, 26-Aug-02 www.vishay.com 1 Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = -4.5 V -1.0 -20 0.750 @ VGS = -2.5 V - 0.81 1.10 @ VGS = -1.8 V - 0.67 Marking Code DC XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 D2 S2 G2 D1 S1 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS "8 V _ a TA = 25_C - 1.0 -0.88 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID - 0.72 -0.63 Pulsed Drain Current IDM -3 A Continuous Diode Current (Diode Conduction)a IS -0.61 -0.48 TA = 25_C 0.74 0.57 Maximum Power Dissipationa TA = 85_C PD 0.38 0.30 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 5 sec 130 170 Maximum Junction-to-Ambienta Steady State RthJA 170 220 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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