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RN1112FT Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. RN1112FT
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN1112FT Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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RN1112FT,RN1113FT
2002-01-29
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112FT,RN1113FT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
· High-density mount is possible because of devices housed in very thin
TESM packages.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
· Wide range of resistor values are available to use in various circuit
designs.
· Complementary to RN2112FT, RN2113FT
Equivalent Circuit and Bias Resistor Values
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector poser dissipation
PC (Note)
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: Total rating
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight:
g (typ.)
R1
B
C
E


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