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DRV8306HRSMT Datasheet(PDF) 7 Page - Texas Instruments |
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DRV8306HRSMT Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 37 page  7 DRV8306 www.ti.com SLVSE38 – APRIL 2018 Product Folder Links: DRV8306 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Electrical Characteristics (continued) at VVM = 6 to 38 V over operating ambient temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (2) Errata: The current silicon has a typical value of 40 mV (Hall comparator hysteresis voltage - VHYS). (3) Errata: The current silicon has a min/max value of ±10 mV (Hall comparator hysteresis difference - ΔVHYS). IDRIVEP Peak source gate current (high-side and low-side) IDRIVE tied to AGND 15 mA IDRIVE 18 kΩ (±5%) to AGND 45 IDRIVE 75 kΩ (±5%) to AGND 60 IDRIVE Hi-Z ( > 500 kΩ to AGND) 90 IDRIVE 75 kΩ (±5%) to DVDD 105 IDRIVE 18 kΩ (±5%) to DVDD 135 IDRIVE tied to DVDD 150 IDRIVEN Peak sink gate current (high-side and low-side) IDRIVE tied to AGND 30 mA IDRIVE 18 kΩ (±5%) to AGND 90 IDRIVE 75 kΩ (±5%) to AGND 120 IDRIVE Hi-Z ( > 500 kΩ to AGND) 180 IDRIVE 75 kΩ (±5%) to DVDD 210 IDRIVE 18 kΩ (±5%) to DVDD 270 IDRIVE tied to DVDD 300 IHOLD FET holding current Source current after tDRIVE 15 mA Sink current after tDRIVE 30 ISTRONG FET hold-off strong pulldown GHX and GLX 300 mA ROFF FET gate hold-off resistor GHX to SHX and GLX to PGND 150 kΩ HALL SENSOR INPUTS (HPX, HNX) VHYS Hall comparator hysteresis voltage 25(2) mV ΔVHYS Hall comparator hysteresis difference Between A, B and C –5(3) 5(3) mV VID Hall comparator input differential 50 mV VCM (1) Hall comparator input common mode voltage CM range 1.5 3.5 V II Input leakage current H_x+= H_x- –1 1 µA tHDEG Hall deglitch time 5 µs CYCLE-BY-CYCLE CURRENT LIMIT (ISEN) VLIMIT Voltage limit across RSENSE for the current limiter 0.225 0.25 0.275 V tBLANK Time that VLIMIT is ignored from the start of the PWM cycle 5 µs PROTECTION CIRCUITS VUVLO VM undervoltage lockout VM falling, UVLO report 5.4 5.8 V VM rising, UVLO recovery 5.6 6 VUVLO_HYS VM undervoltage hysteresis Rising to falling threshold 200 mV tUVLO_DEG (1) VM undervoltage deglitch time VM falling, UVLO report 10 µs VCPUV Charge pump undervoltage With respect to VM 2.4 V VGS_CLAMP Gate drive clamping voltage Positive clamping voltage 10.5 15 V Negative clamping voltage –0.6 |
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