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K11P121M50SF4V2 Datasheet(PDF) 30 Page - NXP Semiconductors |
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K11P121M50SF4V2 Datasheet(HTML) 30 Page - NXP Semiconductors |
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30 / 65 page  Table 22. NVM reliability specifications (continued) Symbol Description Min. Typ.1 Max. Unit Notes nnvmcycp Cycling endurance 10 K 50 K — cycles 2 Data Flash tnvmretd10k Data retention after up to 10 K cycles 5 50 — years — tnvmretd1k Data retention after up to 1 K cycles 20 100 — years — nnvmcycd Cycling endurance 10 K 50 K — cycles 2 FlexRAM as EEPROM tnvmretee100 Data retention up to 100% of write endurance 5 50 — years — tnvmretee10 Data retention up to 10% of write endurance 20 100 — years — nnvmwree16 nnvmwree128 nnvmwree512 nnvmwree4k Write endurance • EEPROM backup to FlexRAM ratio = 16 • EEPROM backup to FlexRAM ratio = 128 • EEPROM backup to FlexRAM ratio = 512 • EEPROM backup to FlexRAM ratio = 4096 35 K 315 K 1.27 M 10 M 175 K 1.6 M 6.4 M 50 M — — — — writes writes writes writes 3 1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering Bulletin EB619. 2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ °C. 3. Write endurance represents the number of writes to each FlexRAM location at -40 °C ≤Tj ≤ °C influenced by the cycling endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and typical values assume all byte-writes to FlexRAM. 3.4.2 EzPort switching specifications Table 23. EzPort switching specifications Num Description Min. Max. Unit Operating voltage 1.71 3.6 V EP1 EZP_CK frequency of operation (all commands except READ) — fSYS/2 MHz EP1a EZP_CK frequency of operation (READ command) — fSYS/8 MHz EP2 EZP_CS negation to next EZP_CS assertion 2 x tEZP_CK — ns EP3 EZP_CS input valid to EZP_CK high (setup) 5 — ns EP4 EZP_CK high to EZP_CS input invalid (hold) 5 — ns EP5 EZP_D input valid to EZP_CK high (setup) 2 — ns EP6 EZP_CK high to EZP_D input invalid (hold) 5 — ns EP7 EZP_CK low to EZP_Q output valid — ns EP8 EZP_CK low to EZP_Q output invalid (hold) 0 — ns EP9 EZP_CS negation to EZP_Q tri-state — 12 ns Peripheral operating requirements and behaviors 30 Kinetis K11D Sub-Family Data Sheet, Rev6, 04/2014. Freescale Semiconductor, Inc. |
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