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K11P80M50SF4V2 Datasheet(PDF) 28 Page - NXP Semiconductors |
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K11P80M50SF4V2 Datasheet(HTML) 28 Page - NXP Semiconductors |
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28 / 60 page  1. Maximum time based on expectations at cycling end-of-life. 3.4.1.2 Flash timing specifications — commands Table 20. Flash command timing specifications Symbol Description Min. Typ. Max. Unit Notes trd1blk64k trd1blk256k Read 1s Block execution time • 64 KB data flash • 256 KB program flash — — — — 0.9 1.7 ms ms — trd1sec2k Read 1s Section execution time (flash sector) — — 60 μs 1 tpgmchk Program Check execution time — — 45 μs 1 trdrsrc Read Resource execution time — — 30 μs 1 tpgm4 Program Longword execution time — 65 145 μs — tersblk64k tersblk256k Erase Flash Block execution time • 64 KB data flash • 256 KB program flash — — 58 122 580 985 ms ms 2 tersscr Erase Flash Sector execution time — 14 114 ms 2 tpgmsec512 tpgmsec1k tpgmsec2k Program Section execution time • 512 bytes flash • 1 KB flash • 2 KB flash — — — 2.4 4.7 9.3 — — — ms ms ms — trd1all Read 1s All Blocks execution time — — 1.8 ms — trdonce Read Once execution time — — 25 μs 1 tpgmonce Program Once execution time — 65 — μs — tersall Erase All Blocks execution time — 250 2000 ms 2 tvfykey Verify Backdoor Access Key execution time — — 30 μs 1 tswapx01 tswapx02 tswapx04 tswapx08 Swap Control execution time • control code 0x01 • control code 0x02 • control code 0x04 • control code 0x08 — — — — 200 70 70 — — 150 150 30 μs μs μs μs — tpgmpart64k Program Partition for EEPROM execution time • 64 KB FlexNVM — 138 — ms — tsetramff tsetram32k tsetram64k Set FlexRAM Function execution time: • Control Code 0xFF • 32 KB EEPROM backup • 64 KB EEPROM backup — — — 70 0.8 1.3 — 1.2 1.9 μs ms ms — Byte-write to FlexRAM for EEPROM operation Table continues on the next page... Peripheral operating requirements and behaviors 28 Kinetis K11D Sub-Family Data Sheet, Rev6, 04/2014. Freescale Semiconductor, Inc. |
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